蚀刻(微加工)
等离子体
离子
等离子体刻蚀
化学反应
化学
电子
各向同性腐蚀
反应离子刻蚀
平版印刷术
化学过程
等离子体化学
原子物理学
化学物理
分析化学(期刊)
材料科学
光电子学
环境化学
物理
生物化学
量子力学
有机化学
图层(电子)
作者
J. W. Coburn,Harold F. Winters
摘要
The extent to which gas-surface chemical reactions can be enhanced by energetic radiation (primarily ions and electrons) incident on the surface is described. Emphasis is placed on chemical systems which lead to volatile reaction products. In particular, the reactions of Si, SiO2, and Si3N4 with XeF2, F2, and Cl2 are examined experimentally. Possible mechanisms for the radiation-induced enhancement are discussed and some technological implications of this process in plasma etching technology and lithography are considered.
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