薄膜
压电
材料科学
压电响应力显微镜
四方晶系
铁电性
压电系数
纳米尺度
衍射
表征(材料科学)
兴奋剂
电介质
分析化学(期刊)
纳米技术
结晶学
晶体结构
光电子学
复合材料
光学
化学
物理
色谱法
作者
M. Abazari,Taekjib Choi,S‐W. Cheong,A. Safari
标识
DOI:10.1088/0022-3727/43/2/025405
摘要
We report the observation of domain structure and piezoelectric properties of pure and Mn-doped (K 0.44 ,Na 0.52 ,Li 0.04 )(Nb 0.84 ,Ta 0.1 ,Sb 0.06 )O 3 (KNN-LT-LS) thin films on SrTiO 3 substrates. It is revealed that, using piezoresponse force microscopy, ferroelectric domain structure in such 500 nm thin films comprised of primarily 180° domains. This was in accordance with the tetragonal structure of the films, confirmed by relative permittivity measurements and x-ray diffraction patterns. Effective piezoelectric coefficient ( d 33 ) of the films were calculated using piezoelectric displacement curves and shown to be ∼53 pm V −1 for pure KNN-LT-LS thin films. This value is among the highest values reported for an epitaxial lead-free thin film and shows a great potential for KNN-LT-LS to serve as an alternative to PZT thin films in future applications.
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