成核
奥斯特瓦尔德成熟
动力学蒙特卡罗方法
统计物理学
蒙特卡罗方法
航程(航空)
增长率
单层
薄膜
材料科学
热力学
数学
纳米技术
物理
几何学
统计
复合材料
作者
Christian Rätsch,J. A. Venables
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2003-09-01
卷期号:21 (5): S96-S109
被引量:296
摘要
A review is given of nucleation and growth models as applied to the earliest stages of thin film growth. Rate equations, kinetic Monte Carlo, and level set simulations are described in some detail, with discussion of remaining uncertainties, in particular the functional form of the so-called capture numbers in rate equations. Recent examples are given of sub-monolayer nucleation at surface defects, attachment-limited capture, and Ostwald ripening. The experimental literature is cited, and experiment–theory comparisons are made where possible. Emphasis is given to fast computational models that can span a large range of length and time scales, which might be further developed in the direction of on-line process control.
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