Nanostructured CdS Buffer Layer Fabricated with a Simple Spin‐Coating Method for Sb2S3 Solar Cells

Nanostructured CdS thin films are fabricated by a simple spin‐coating method at various annealing temperatures from 200 to 350 °C. CdS films of 80 nm thick, which are composed of nanoparticles or flakes with size ≈20–200 nm, are obtained. The nanostructured morphology is identified by scanning electron microscopy measurement. Sb 2 S 3 films with large‐sized grains are deposited on the CdS thin films with hydrothermal method, in which CdS is adopted as electron transport layer (ETL) for Sb 2 S 3 solar cells. The power conversion efficiency (PCE) is 4.88% for the best solar cell based on nanostructured CdS ETLs. Herein, a very facile and effective route to fabricate nanostructured CdS buffer layer for Sb 2 S 3 solar cells is offered.