Thermodynamic Analysis of Preparation of SiBCN Films Using a Trimethylaminoborane–Tetramethyldisilazane Gas Mixture

Thermodynamic modeling of the chemical vapor deposition of films of complex composition in the Si–B–N–C–H system at reduced pressure (0.01 Torr) in a wide temperature range (400–1200 K) has been carried out using volatile organoelement compounds—tetramethyldisilazane [HSiMe2]2NH and trimethylaminoborane Me3N·BH3—as precursors. According to CVD diagrams, films can be phase complexes containing the Si3N4, BN, SiC, and C phases in various combinations. The results can be used to control the CVD process in the Si–B–N–C–H system.