铁电性
材料科学
光电子学
小型化
极化(电化学)
纳米技术
铁电电容器
非易失性存储器
电场
电介质
工程物理
晶体管
负阻抗变换器
纳米电子学
压电
离子键合
场效应晶体管
薄膜
作者
Ateeb Naseer,Yogesh Singh Chauhan,Somnath Bhowmick,Amit Agarwal
出处
期刊:2D materials
[IOP Publishing]
日期:2025-12-07
卷期号:13 (1): 012004-012004
被引量:1
标识
DOI:10.1088/2053-1583/ae28e0
摘要
Abstract Ferroelectric materials are essential for advancing energy-efficient, high-speed field-effect transistors and high-density, nonvolatile memory technologies. However, as the demand for miniaturization increases, bulk ferroelectric materials face significant challenges owing to the reduction or loss of ferroelectric polarization due to enhanced depolarization fields at reduced thicknesses. This has shifted the research focus toward low-dimensional materials, particularly two-dimensional (2D) ferroelectrics, which offer promising solutions. 2D ferroelectric materials are atomically thin crystalline materials, typically consisting of a single layer or a few atomic layers, exhibiting spontaneous and switchable electric polarization. This polarization can arise either from ionic displacement or from interlayer sliding and can be altered by applying an external electric field. Recent theoretical and experimental research has uncovered a broad spectrum of 2D ferroelectric materials with substantial potential for advancing next-generation ferroelectric technology. Here, we present a comprehensive overview of the latest developments in the field of 2D ferroelectric materials, emphasizing their applications in cutting-edge technologies. Our review highlights the immense potential of 2D ferroelectric materials for enabling ultra-scaled logic, memory, and optoelectronic devices tailored for specific applications.
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