X射线光电子能谱
材料科学
磨料
氢
薄脆饼
化学工程
离子
冶金
纳米技术
化学
有机化学
工程类
作者
Seok‐Jun Hong,Sang-Hyeon Park,Chaitanya Kaluram Kanade,Jaewon Lee,Pengzhan Liu,Inkoo Lee,Hyunho Seok,Taesung Kim
标识
DOI:10.1149/2162-8777/ab902c
摘要
In the present study, hydrogen water was applied to ceria abrasive removal in post-CMP cleaning. The surface of the ceria abrasive was reduced by the hydrogen water from the Ce4+ to Ce3+ state. Reduction of the ceria abrasive can weaken the bonding between ceria and the SiO2 wafer surface. X-ray photoelectron spectroscopy (XPS) and UV–visible observations were utilized to reveal the reduction from Ce4+ to Ce3+ by hydrogen water. Thus, the remaining ceria particles and Ce-ion concentrations were reduced by 70% and 63%, respectively.
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