材料科学
接触电阻
欧姆接触
光电子学
热离子发射
单层
半导体
肖特基势垒
有机半导体
晶体管
饱和电流
纳米技术
场效应晶体管
饱和(图论)
有机电子学
电气工程
图层(电子)
电压
二极管
工程类
电子
物理
组合数学
量子力学
数学
作者
Boyu Peng,Ke Cao,Albert Ho Yuen Lau,Ming Chen,Yang Lü,Paddy K. L. Chan
标识
DOI:10.1002/adma.202002281
摘要
Abstract The contact resistance limits the downscaling and operating range of organic field‐effect transistors (OFETs). Access resistance through multilayers of molecules and the nonideal metal/semiconductor interface are two major bottlenecks preventing the lowering of the contact resistance. In this work, monolayer (1L) organic crystals and nondestructive electrodes are utilized to overcome the abovementioned challenges. High intrinsic mobility of 12.5 cm 2 V −1 s −1 and Ohmic contact resistance of 40 Ω cm are achieved. Unlike the thermionic emission in common Schottky contacts, the carriers are predominantly injected by field emission. The 1L‐OFETs can operate linearly from V DS = −1 V to V DS as small as −0.1 mV. Thanks to the good pinch‐off behavior brought by the monolayer semiconductor, the 1L‐OFETs show high intrinsic gain at the saturation regime. At a high bias load, a maximum current density of 4.2 µA µm −1 is achieved by the only molecular layer as the active channel, with a current saturation effect being observed. In addition to the low contact resistance and high‐resolution lithography, it is suggested that the thermal management of high‐mobility OFETs will be the next major challenge in achieving high‐speed densely integrated flexible electronics.
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