带隙
二极管
场效应晶体管
半导体
物理
材料科学
晶体管
光电子学
量子力学
电压
作者
Hongpeng Zhang,Lei Yuan,Xiaoyan Tang,Jichao Hu,Jianwu Sun,Yimen Zhang,Yuming Zhang,Renxu Jia
出处
期刊:IEEE Transactions on Power Electronics
[Institute of Electrical and Electronics Engineers]
日期:2020-05-01
卷期号:35 (5): 5157-5179
被引量:109
标识
DOI:10.1109/tpel.2019.2946367
摘要
As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 eV), high theoretical breakdown electric field (8 MV/cm), and large Baliga's figure of merit, which is deemed as a potential candidate for next generation high-power electronics, including diodes, field effect transistors (FETs), etc. In this article, we introduce the basic material properties of Ga 2 O 3 , and review the recent progress and advances of β-Ga 2 O 3 based metal-oxide-semiconductor field-effect transistors (MOSFETs). Due to the problematic p-type doping technology up to now, the enhancement-mode (E-mode) β-Ga 2 O 3 FETs face more difficulties, compared with depletion mode (D-mode). This article focuses on reviewing the recent progress of E-mode Ga 2 O 3 MOSFETs, summarizing and comparing various feasible solutions when p-type doping is absent. Furthermore, the device fabrication and performances of state-of-art β-Ga 2 O 3 MOSFETs, including D-mode, E-mode, and planar/vertical structure are fully discussed and compared, as well as potential solutions to the challenges of Ga 2 O 3 FETs.
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