Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry

Structural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied.The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal space maps (HR-RSMs) were found as a function of the radiation dose.The generalized dynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several types (spherical and disc-shaped clusters as well as dislocation loops) and a damaged nearsurface layer was used for explanation.