Application of Perovskite‐Structured Materials in Field‐Effect Transistors

Abstract Over the past decades, perovskite materials, including oxide and hybrid types, have drawn considerable attention. Oxide perovskite materials have been investigated for a long time as semiconductor and insulator layers, while hybrid perovskite materials combining the characteristics of inorganic and organic counterparts in a molecular‐scale composite emerged under the spotlight recently. In the latter case, the inorganic frameworks of metal halide octahedra interact with one another through strong covalent or ionic bonds, which ensure their high charge carrier mobility and thermal stability. Their organic parts allow the hybrid perovskite materials to be fabricated through a simple, low capital cost, and low‐temperature process, and induce elastic properties in the material. Due to the unique physical properties of hybrid perovskites, they have been used in multiple applications, such as in light‐emitting diodes, solar cells, and photodetectors. This Review will focus on the application of oxide and hybrid perovskite materials in field‐effect transistors, which are among the essential elements in modern electronics. As a testbed, a field‐effect transistor device can also be used as a tool to characterize the charge carrier transport properties of materials.