铁电性
材料科学
电容器
铁电电容器
聚合物
平版印刷术
制作
光电子学
纳米技术
复合材料
电压
电介质
电气工程
工程类
病理
替代医学
医学
作者
Thomas Lenz,Dong Zhao,George M. Richardson,Ilias Katsouras,Kamal Asadi,Gunnar Glaßer,Samuel Tobias Zimmermann,Natalie Stingelin,W. S. Christian Roelofs,Martijn Kemerink,Paul W. M. Blom,Dago M. de Leeuw
标识
DOI:10.1002/pssa.201532267
摘要
Ferroelectric nanostructures offer a promising route for novel integrated electronic devices such as non‐volatile memories. Here we present a facile fabrication route for ferroelectric capacitors comprising a linear array of the ferroelectric random copolymer of vinylidenefluoride and trifluoroethylene (P(VDF‐TrFE)) interdigitated with the electrically insulating polymer polyvinyl alcohol (PVA). Micrometer size line gratings of both polymers were fabricated over large area by solution micromolding, a soft lithography method. The binary linear arrays were realized by backfilling with the second polymer. We investigated in detail the device physics of the patterned capacitors. The electrical equivalent circuit is a linear capacitor of PVA in parallel with a ferroelectric capacitor of P(VDF‐TrFE). The binary arrays are electrically characterized by both conventional Sawyer–Tower and shunt measurements. The dependence of the remanent polarization on the array topography is explained by numerical simulation of the electric field distribution.
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