Graphene Hybrid Structures for Integrated and Flexible Optoelectronics

Abstract Graphene (Gr) has many unique properties including gapless band structure, ultrafast carrier dynamics, high carrier mobility, and flexibility, making it appealing for ultrafast, broadband, and flexible optoelectronics. To overcome its intrinsic limit of low absorption, hybrid structures are exploited to improve the device performance. Particularly, van der Waals heterostructures with different photosensitive materials and photonic structures are very effective for improving photodetection and modulation efficiency. With such hybrid structures, Gr hybrid photodetectors can operate from ultraviolet to terahertz, with significantly improved R (up to 10 9 A W −1 ) and bandwidth (up to 128 GHz). Furthermore, integration of Gr with silicon (Si) complementary metal‐oxide‐semiconductor (CMOS) circuits, the human body, and soft tissues is successfully demonstrated, opening promising opportunities for wearable sensors and biomedical electronics. Here, the recent progress in using Gr hybrid structures toward high‐performance photodetectors and integrated optoelectronic applications is reviewed.