捷克先令
材料科学
退火(玻璃)
镉
光电子学
硫化镉
缓冲器(光纤)
太阳能电池
开路电压
薄膜
图层(电子)
价带
锌黄锡矿
价(化学)
带隙
分析化学(期刊)
电压
纳米技术
复合材料
冶金
化学
物理
电信
量子力学
色谱法
计算机科学
作者
Jes K. Larsen,Frederik Larsson,Tobias Törndahl,Nishant Saini,Lars Riekehr,Yi Ren,Adyasha Biswal,Dirk Hauschild,L. Weinhardt,Clemens Heske,Charlotte Platzer‐Björkman
标识
DOI:10.1002/aenm.201900439
摘要
Abstract Cu 2 ZnSnS 4 (CZTS) thin‐film solar cell absorbers with different bandgaps can be produced by parameter variation during thermal treatments. Here, the effects of varied annealing time in a sulfur atmosphere and an ordering treatment of the absorber are compared. Chemical changes in the surface due to ordering are examined, and a downshift of the valence band edge is observed. With the goal to obtain different band alignments, these CZTS absorbers are combined with Zn 1− x Sn x O y (ZTO) or CdS buffer layers to produce complete devices. A high open circuit voltage of 809 mV is obtained for an ordered CZTS absorber with CdS buffer layer, while a 9.7% device is obtained utilizing a Cd free ZTO buffer layer. The best performing devices are produced with a very rapid 1 min sulfurization, resulting in very small grains.
科研通智能强力驱动
Strongly Powered by AbleSci AI