Simulation of MOSFET with Different Dielectric Films

The materials having high dielectric constant offer remarkable advantage of high gate capacitance value as compared to Silicon dioxide. This paper includes simulation of an n-channel MOSFET using different high dielectric constant materials in order to study its electrical characteristics. The simulations are done using Silvaco®. Same parameters are used for the simulations of all the dielectric materials. To replace the conventional SiO2 dielectric gates in MOSFET, high dielectric constant gate technology is used. High-k dielectric offers a solution to leakage problem that occur at gate oxide as thickness is scaled down. The results show that the drain current is increased as dielectric constant of material is increased. But such films with high dielectric constant have stability problems.