记忆电阻器
神经形态工程学
记忆晶体管
电阻器
人工神经网络
电子工程
横杆开关
计算机科学
电阻随机存取存储器
电压
材料科学
电气工程
人工智能
工程类
作者
Hanchan Song,Young Seok Kim,Juseong Park,Kyung Min Kim
标识
DOI:10.1002/aelm.201800740
摘要
Abstract Analog memristors enable compact neuromorphic computing with low power consumption. One of the issues with the technology is slow precise analog data programming. In this study, a novel analog data programming method utilizing a self‐limited set switching is proposed. The method can transfer any resistance values from reference resistors to the target memristor accurately inside a crossbar array by performing an appropriate voltage clocking. An ideal memristor model based on the method is proposed and a Ti‐doped NbO x charge trap memristor is evaluated as a promising candidate for applications. The characteristic error of the Ti‐doped NbO x memristor device is about 5% on average, compared to the ideal memristor, and configuring optimum parallel resistors in the circuit further improves this to 2.95%. The method is then applied to program a memristive neural network and this error is confirmed negligible; thus the proposed method is viable.
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