神经形态工程学
材料科学
量子点
光子学
钙钛矿(结构)
异质结
光电子学
突触重量
突触
纳米技术
长时程增强
计算机科学
神经科学
人工神经网络
人工智能
生物
化学
生物化学
结晶学
受体
作者
Yan Wang,Ziyu Lv,Jinrui Chen,Zhanpeng Wang,Ye Zhou,Li Zhou,Xiaoli Chen,Su‐Ting Han
标识
DOI:10.1002/adma.201802883
摘要
Inspired by the biological neuromorphic system, which exhibits a high degree of connectivity to process huge amounts of information, photonic memory is expected to pave a way to overcome the von Neumann bottleneck for nonconventional computing. Here, a photonic flash memory based on all-inorganic CsPbBr3 perovskite quantum dots (QDs) is demonstrated. The heterostructure formed between the CsPbBr3 QDs and semiconductor layer serves as a basis for optically programmable and electrically erasable characteristics of the memory device. Furthermore, synapse functions including short-term plasticity, long-term plasticity, and spike-rate-dependent plasticity are emulated at the device level. The photonic potentiation and electrical habituation are implemented and the synaptic weight exhibits multiple wavelength response from 365, 450, 520 to 660 nm. These results may locate the stage for further thrilling novel advances in perovskite-based memories.
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