Achieving high energy storage performances in high-entropy epitaxial Na0.5Bi0.5Ti0.7Hf0.1Zr0.1Sn0.1O3 thin film

Lead-free Na0.5Bi0.5TiO3 (NBT) exhibiting large polarization and a high Curie temperature can be considered as a promising candidate for dielectric capacitors. The large polarization switching hysteresis and low breakdown field, however, restrict the performance optimization. Herein, epitaxial NBT-based high-entropy Na0.5Bi0.5Ti0.7Hf0.1Zr0.1Sn0.1O3 (NBTHZS) films are designed and prepared by solution-based processing. Compared with the NBT film, the polarization switching hysteresis is depressed and the breakdown field is significantly improved for the NBTHZS film due to the high-entropy effects. Therefore, the NBTHZS film achieves a ∼16 times enhancement of energy density (from 5.1 J/cm3 of the NBT film to 81 J/cm3 of the NBTHZS film) and a high efficiency of 74.1% as well as an excellent performance reliability. The results shed light on enhancing dielectric energy storage properties of NBT-based films by forming high-entropy structures.