微动
消散
材料科学
半径
接触几何
刚度
球体
机械
接触面积
振荡(细胞信号)
接触力
磁滞
振幅
流离失所(心理学)
球形帽
几何学
复合材料
经典力学
凝聚态物理
物理
光学
热力学
生物
遗传学
计算机科学
计算机安全
数学
心理治疗师
心理学
天文
出处
期刊:Machines
[MDPI AG]
日期:2023-04-18
卷期号:11 (4): 484-484
被引量:2
标识
DOI:10.3390/machines11040484
摘要
Dry, frictional steel-on-steel contacts under small-scale oscillations are considered experimentally and theoretically. As indenting bodies, spheres, and truncated spheres are used to retrace the transition from smooth to sharp contact profile geometries. The experimental apparatus is built as a compliant setup, with the characteristic macroscopic values of stiffness being comparable to or smaller than the contact stiffness of the fretting contact. A hybrid macroscopic–contact model is formulated to predict the time development of the macroscopic contact quantities (forces and global relative surface displacements), which are measured in the experiments. The model is well able to predict the macroscopic behavior and, accordingly, the frictional hysteretic losses observed in the experiment. The change of the indenter profile from spherical to truncated spherical “pushes” the fretting contact towards the sliding regime if the nominal normal force and tangential displacement oscillation amplitude are kept constant. The transition of the hysteretic behavior, depending on the profile geometry from the perfectly spherical to the sharp flat-punch profile, occurs for the truncated spherical indenter within a small margin of the radius of its flat face. Already for a flat face radius which is roughly equal to the contact radius for the spherical case, the macroscopic hysteretic behavior cannot be distinguished from a flat punch contact with the same radius. The compliance of the apparatus (i.e., the macrosystem) can have a large influence on the energy dissipation and the fretting regime. Below a critical value for the stiffness, the fretting contact exhibits a sharp transition to the “sticking” regime. However, if the apparatus stiffness is large enough, the hysteretic behavior can be controlled by changing the profile geometry.
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