电致发光
电场
发光二极管
光电子学
材料科学
二极管
紫外线
兴奋剂
宽禁带半导体
电位
库仑
原子物理学
电压
纳米技术
物理
图层(电子)
电子
量子力学
作者
Weiqing Tang,L.W. Guo,Nan Qiao,Zhiming Wu,Yaping Wu
摘要
The dehydrogenation of the Mg–H complex to increase the hole concentration is crucial for promoting the performance of ultraviolet-C light-emitting diodes (UVC-LEDs). Here, we systematically investigate the efficient removal of H atoms through combining external electric field produced by electrochemical process and polarized electric field of p-AlGaN. The measured electroluminescence spectra show the emission intensity of optimized AlGaN structure achieving a large increment of 12.5% after the H removal. Furthermore, the reliability and lifetime of UVC-LEDs are also significantly promoted by our methods. The physical mechanism of the coupling interaction between external and polarized electric fields on H removal is further elucidated through the first-principles calculations. The density of states, electrostatic potential energies, and differential charge densities of Mg–H doping AlGaN under various electric fields reveal that the charge redistributions and huge electrostatic potential difference between Mg and H atoms are responsible for the breaking of Mg–H bonds and expelling of H atoms. This work offers feasible strategy to promote the applications of AlGaN-based UVC-LEDs.
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