Two-Dimensional Violet Phosphorus P11: A Large Band Gap Phosphorus Allotrope

结晶紫 化学 带隙 单斜晶系 Crystal(编程语言) 光致发光 拉曼光谱 电子迁移率 直接和间接带隙 分析化学(期刊) 晶体结构 结晶学 光电子学 材料科学 光学 物理 医学 病理 色谱法 计算机科学 程序设计语言
作者
Gary Cicirello,Mengjing Wang,Quynh P. Sam,James L. Hart,Natalie Williams,Huabing Yin,J. Judy,Jian Wang
出处
期刊:Journal of the American Chemical Society [American Chemical Society]
卷期号:145 (14): 8218-8230 被引量:27
标识
DOI:10.1021/jacs.3c01766
摘要

The discovery of novel large band gap two-dimensional (2D) materials with good stability and high carrier mobility will innovate the next generation of electronics and optoelectronics. A new allotrope of 2D violet phosphorus P11 was synthesized via a salt flux method in the presence of bismuth. Millimeter-sized crystals of violet-P11 were collected after removing the salt flux with DI water. From single-crystal X-ray diffraction, the crystal structure of violet-P11 was determined to be in the monoclinic space group C2/c (no. 15) with unit cell parameters of a = 9.166(6) Å, b = 9.121(6) Å, c = 21.803(14)Å, β = 97.638(17)°, and a unit cell volume of 1807(2) Å3. The structure differences between violet-P11, violet-P21, and fibrous-P21 are discussed. The violet-P11 crystals can be mechanically exfoliated down to a few layers (∼6 nm). Photoluminescence and Raman measurements reveal the thickness-dependent nature of violet-P11, and exfoliated violet-P11 flakes were stable in ambient air for at least 1 h, exhibiting moderate ambient stability. The bulk violet-P11 crystals exhibit excellent stability, being stable in ambient air for many days. The optical band gap of violet-P11 bulk crystals is 2.0(1) eV measured by UV-Vis and electron energy-loss spectroscopy measurements, in agreement with density functional theory calculations which predict that violet-P11 is a direct band gap semiconductor with band gaps of 1.8 and 1.9 eV for bulk and monolayer, respectively, and with a high carrier mobility. This band gap is the largest among the known single-element 2D layered bulk crystals and thus attractive for various optoelectronic devices.

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