范德瓦尔斯力
石墨烯
光电探测器
对偶(语法数字)
材料科学
双模
光电子学
电压
模式(计算机接口)
纳米技术
物理
量子力学
电子工程
计算机科学
工程类
哲学
人机交互
语言学
分子
作者
Zhonghui Xia,Sujuan Wang,Xueting Liu,Hongyu Chen,Longxing Su
标识
DOI:10.1088/1361-6463/ad4660
摘要
Abstract Two-dimensional (2D) molybdenum selenide (MoSe 2 ) is promising for use in the development of photodetectors for the harvesting of light from the ultraviolet to the near-infrared band, while high responsivity and fast response speed are difficult to simultaneously realize. Herein, we present a dual-mode MoSe 2 photodetector with asymmetric electrodes, in which graphene and Cr metal are utilized as ohmic and Schottky contacts, respectively. The photodiode possesses fabulous Schottky characteristics, with a rectification ratio of ∼250 and a low dark current of ∼40 pA at −1 V. Under forward bias voltage of 1 V, the photodetector works in photoconductive mode with a slow response speed (decay time: ∼5 min) but high responsivity (632 mA W −1 ). However, at reverse bias voltage, the photodetector acts as a photovoltaic-type device due to the Schottky barrier between Cr and MoSe 2 . Because of the reinforced built-in electric field, the photodetector driven at −5 V shows much faster response speeds (rise time: 1.96 ms; decay time: 755 µ s). This study provides a deep understanding of asymmetric structure MoSe 2 photodetectors operated in two modes, which promotes a forward step toward 2D material optoelectronics.
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