Molecular Intercalation‐Induced Two‐Phase Evolution Engineering of 1T and 2H‐MS 2 (M = Mo, V, W) for Interface‐Polarization‐Enhanced Electromagnetic Absorbers

Abstract Polarization at interfaces is an important loss mechanism for electromagnetic wave (EMW) attenuation, though the motion behavior of carriers in interfaces composed of different types of conductors has yet to be investigated. Tuning the phase structure of transition metal dichalcogenides (TMDs) MS 2 (M = Mo, V, W) by organics small molecule intercalation to achieve the modulation of interfacial types is an effective strategy, where 1T‐MS 2 exhibits metallic properties and 2H‐MS 2 has semiconducting properties. To exclude the contribution of the intrinsic properties of TMDs materials, three TMDs (MoS 2 , VS 2 , and WS 2 ), which also possess phase transitions, are investigated. Among them, the 1T‐MS 2 composite exhibits excellent EMW absorption performance under the synergistic effect of interfacial polarization and conduction loss. 1T‐MoS 2 /MOF‐A exhibits the best EMW absorption performance with an RL min of −61.07 dB at a thickness of 3.0 mm and an EAB of 7.2 GHz at 2.3 mm. The effectiveness of the modulation of the interfacial polarization using 1T‐phase and 2H‐phase MS 2 is demonstrated, which is important for the analysis of the carrier motion behavior during the interfacial loss.