材料科学
铁电性
纳米技术
平面(几何)
化学工程
光电子学
电介质
几何学
数学
工程类
作者
Xuan Weng,J. Gui,Wenjun Chen,Junyang Tan,Shengnan Li,Lei Tang,Rongjie Zhang,Qiang Wei,Jiachun Xu,Changjiu Teng,Shilong Zhao,Bilu Liu
标识
DOI:10.1002/adfm.202503780
摘要
Abstract The emerging 2D transition metal thiophosphites with multiferroicity show great potential in new‐concept and multifunctional nanoelectronics for neuromorphic technologies. Although extensive research has focused on the symmetry‐breaking structures and induced low‐temperature ferroic orders of 2D MnPS 3 , its room‐temperature ferroic behaviors are still elusive. In this work, we reveal the out‐of‐plane ferroelectricity as well as the first room‐temperature ferroic order of 2D MnPS 3 . The observation of interlayer displacements and surface potential differences in 2D MnPS 3 evidences that its unpredicted ferroelectric polarization stems from sliding‐induced symmetry breaking. In addition, we combine 2D MnPS 3 as the dielectric layer and a WSe 2 channel to construct a van der Waals ferroelectric field‐effect transistor, which shows bipolar memory characteristics with an on/off ratio of 10 4 at ambient and cryogenic circumstances. This work uncovers the out‐of‐plane ferroelectricity of 2D MnPS 3 , paving the way to fabricate ferroelectronic devices with multi‐functionality.
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