记忆电阻器
神经形态工程学
钥匙(锁)
计算机科学
计算机体系结构
电子工程
桥(图论)
功率(物理)
电阻随机存取存储器
计算机工程
数码产品
工程类
极限(数学)
协议(科学)
嵌入式系统
计算机硬件
电力电子
转化式学习
绩效改进
电气工程
性能增强
纳米电子学
频道(广播)
水准点(测量)
同步(交流)
记忆晶体管
人工神经网络
作者
Zhaorui Liu,Caifang Gao,Jingbo Yang,Zuxin Chen,Enlong Li,Jun Li,Mengjiao Li,Jianhua Zhang
标识
DOI:10.1088/2631-7990/ae053a
摘要
Abstract Memristors have emerged as a transformative technology in the realm of electronic devices, offering unique advantages such as fast switching speeds, low power consumption, and the ability to sensor-memory-compute. The applications span across non-volatile memory, neuromorphic computing, hardware security, and beyond, prompting memristors to become a versatile solution for next-generation computing and data storage systems. Despite enormous potential of memristors, the transition from laboratory prototypes to large-scale applications is challenging in terms of material stability, device reproducibility, and array scalability. This review systematically explores recent advancements in high-performance memristor technologies, focusing on performance enhancement strategies through material engineering, structural design, pulse protocol optimization, and algorithm control. We provide an in-depth analysis of key performance metrics tailored to specific applications, including non-volatile memory, neuromorphic computing, and hardware security. Furthermore, we propose a co-design framework that integrates device-level optimizations with operational-level improvements, aiming to bridge the gap between theoretical models and practical implementations.
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