钙钛矿(结构)
钝化
材料科学
能量转换效率
结晶
噻吩
分子
密度泛函理论
共轭体系
氧化物
Atom(片上系统)
铟
光化学
氧化铟锡
光电子学
光伏系统
光伏
偶极子
硫黄
无机化学
结晶学
化学物理
化学工程
聚合物太阳能电池
纳米技术
溴化物
作者
Qingqing Liu,Ke Zhao,Lu Jin,Shaochen Zhang,Libing Yao,Qinggui Li,Jingjing Zhou,Xiaonan Wang,Yixin Luo,Yuan Tian,Caner Değer,İlhan Yavuz,Zixuan Peng,Xuechun Sun,Jiahui Shen,Jiazhe Xu,Xu Zhang,Jingjing Xue,Rui Wang
标识
DOI:10.1002/sstr.202500437
摘要
Hole‐selective contacts, as a crucial component in perovskite solar cells (PSCs), have attracted significant research interest owing to their solution‐processability, high device performance, and long‐term stability. Despite their effectiveness in interfacial modification and hole extraction, their defect passivation capability is limited by the absence of exocyclic functional atom coordinating with lead iodide. Here, two isomeric derivatives, (2‐(benzo[b]benzo[4,5]thieno[2,3‐d]thiophen‐2‐yl)ethyl)phosphonic acid (BTBT‐L) and (2‐(benzo[b]benzo[4,5]thieno[2,3‐d]thiophen‐4‐yl)ethyl)phosphonic acid (BTBT‐Z) are reported. BTBT‐L exhibits a linear structure, while BTBT‐Z adopts a zig–zag configuration with one sulfur atom positioned opposite to the anchoring group. Compared with BTBT‐L, BTBT‐Z exhibits a higher electron density on the thiophene sulfur atom and a larger molecular dipole moment, inducing enhanced hole extraction and transport capability. Furthermore, BTBT‐Z demonstrates improved defect passivation capability at the buried interface of the perovskite layer, promoting enhanced crystallization and thin‐film quality, thereby leading to higher power conversion efficiency (PCE) and better operational stability. With the rationally designed BTBT‐Z to modify the indium tin oxide substrate, the inverted PSC achieves a champion efficiency of 25.1% with improved device stability, retaining over 90% of the initial PCE after continuous maximum power point tracking under 1‐sun irradiation for 1000 h.
科研通智能强力驱动
Strongly Powered by AbleSci AI