材料科学
异质结
光电子学
结晶度
载流子寿命
能量转换效率
太阳能电池
开路电压
光伏系统
载流子
重组
杂质
原子层沉积
纳米技术
图层(电子)
电压
硅
化学
电气工程
复合材料
生物化学
有机化学
基因
工程类
作者
Zuoyun Wang,Rutao Meng,Hongling Guo,Yali Sun,Yue Liu,Huamei Zhang,Zixiu Cao,Jiabin Dong,Xuejun Xu,Guangxing Liang,Licheng Lou,Dongmei Li,Qingbo Meng,Yi Zhang
出处
期刊:Small
[Wiley]
日期:2023-02-28
卷期号:19 (22)
标识
DOI:10.1002/smll.202300634
摘要
Increasing the fill factor (FF) and the open-circuit voltage (VOC ) simultaneously together with non-decreased short-circuit current density (JSC ) are a challenge for highly efficient Cu2 ZnSn(S,Se)4 (CZTSSe) solar cells. Aimed at such target in CZTSSe solar cells, a synergistic strategy to tailor the recombination in the bulk and at the heterojunction interface has been developed, consisting of atomic-layer deposited aluminum oxide (ALD-Al2 O3 ) and (NH4 )2 S treatment. With this strategy, deep-level CuZn defects are converted into shallower VCu defects and improved crystallinity, while the surface of the absorber is optimized by removing Zn- and Sn-related impurities and incorporating S. Consequently, the defects responsible for recombination in the bulk and at the heterojunction interface are effectively passivated, thereby prolonging the minority carrier lifetime and increasing the depletion region width, which promote carrier collection and reduce charge loss. As a consequence, the VOC deficit decreases from 0.607 to 0.547 V, and the average FF increases from 64.2% to 69.7%, especially, JSC does not decrease. Thus, the CZTSSe solar cell with the remarkable efficiency of 13.0% is fabricated. This study highlights the increased FF together with VOC simultaneously to promote the efficiency of CZTSSe solar cells, which could also be applied to other photoelectronic devices.
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