铁电性
之字形的
材料科学
手性(物理)
极化(电化学)
凝聚态物理
单层
纳米管
联轴节(管道)
纳米技术
化学物理
电介质
光电子学
碳纳米管
物理
量子力学
化学
复合材料
几何学
Nambu–Jona Lasinio模型
物理化学
手征对称破缺
数学
夸克
作者
Hao-Chen Wang,Zhi‐Hao Wang,Xuan‐Yan Chen,Su‐Huai Wei,Wenguang Zhu,Xie Zhang
标识
DOI:10.1088/0256-307x/40/4/047701
摘要
Ferroelectricity of group-IV chalcogenides MX ( M = Ge, Sn; X = Se, S) monolayers has been extensively investigated. However, how the ferroelectricity evolves in their one-dimensional nanotubes remains largely unclear. Employing an accurate deep-learning interatomic potential of first-principles precision, we uncover a general stepwise mechanism for polarization switching in zigzag and chiral GeS nanotubes, which has an energy barrier that is substantially lower than the one associated with the conventional one-step switching mechanism. The switching barrier (per atom) gradually decreases with increasing the number of intermediate steps and converges to a value that is almost independent of the tube diameter. In the chiral GeS nanotubes, the switching path of polarization with chirality coupling is preferred at less intermediate steps. This study unveils novel ferroelectric switching behaviors in one-dimensional nanotubes, which is critical to coupling ferroelectricity and chirality.
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