掺杂剂
分析化学(期刊)
氮气
金属有机气相外延
兴奋剂
化学气相沉积
基质(水族馆)
材料科学
氨
薄膜
体积流量
外延
化学
纳米技术
光电子学
图层(电子)
有机化学
地质学
物理
海洋学
量子力学
色谱法
作者
Fikadu Alema,Takeki Itoh,William N. Brand,A. Osinsky,James S. Speck
摘要
We report on the controllable nitrogen doping of β-Ga2O3 as a deep acceptor dopant using ammonia diluted in nitrogen (NH3/N2) as a source of active nitrogen in the metal organic chemical vapor deposition epitaxy. The effects of the NH3/N2 flow rate and substrate temperature on the incorporation efficiency, reproducibility, and controllability of N doping into Ga2O3 were studied using secondary ion mass spectrometry measurements. With the increase in the NH3/N2 molar flow rate from ∼2 × 10−8 to ∼2 × 10−6 mol/min, the N impurities incorporated into the β-Ga2O3 increased linearly from ∼1 × 1018 to ∼2 × 1020 cm−3. At low substrate temperatures (<800 °C), hydrogen was incorporated into the film accompanying nitrogen with comparable concentrations. Despite this, the current–voltage measurements showed that the N and H co-doped films were resistive with a measured resistance of >70 MΩ for a film grown with [N] ≈ [H] of ∼8 × 1018 cm−3. X-ray on-axis (020) and off-axis (111) rocking curve ω-scans and atomic force microscopy measurements show no influence of NH3/N2 dopant on the structural and surface quality of the films. However, the presence of H promoted the growth of (110) and (1¯10) facets elongated along the [001] direction. At high growth temperatures (≥950 °C), the H concentration in the films was reduced by nearly ∼10×, but with a slight increase in the concentration of N. The results show that controllable and repeatable nitrogen doping into β-Ga2O3 can be achieved using ammonia to obtain deep acceptor doping or compensation needed for device engineering in β-Ga2O3-based power electronic devices.
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