钙钛矿(结构)
开路电压
能量转换效率
带隙
材料科学
工程物理
光活性层
纳米技术
化学
光电子学
电压
光伏系统
电气工程
聚合物太阳能电池
工程类
结晶学
作者
Sihong Yue,Long Qin,Tianxiang Li,Yu Tong,Jianlin Peng,Hongqiang Wang,Kun Wang
标识
DOI:10.1002/cssc.202500428
摘要
Cesium lead halide perovskites (CsPbX₃, X=I, Br or their mixture) have emerged as a type of promising photovoltaic material due to their outstanding optoelectronic properties, thermal stability and low cost. Despite the great progress achieved in the corresponding photovoltaic devices, the power conversion efficiency (PCE) still lags far behind their theoretical limit. Comparing with the obtained high current density and fill factor, it is of great potential for increasing the open‐circuit voltage (Voc) value as the Voc loss of the CsPbX3 perovskite solar cells (PSCs) is still quite significant considering their wide bandgap. The primary mechanisms of Voc loss involve non‐radiative recombination driven by bulk defects, interfacial defects and energy level mismatching. To address the above issues, numerous strategies have been investigated including additive engineering, interface modification, charge transport layer replacement, etc. Herein, this review summarizes the most recent work on mitigating Voc loss of CsPbX3 PSCs from three aspects, namely bulk film optimization, interface regulation and transport layer optimization, and gives a brief outlook on how to promote the Voc further. With this, a guideline is provided for researchers engaging in developing CsPbX3 PSCs with high photovoltaic performance.
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