Simulation study on Single-event Effects of the SiC ATMOSFET

The single-event effects (SEEs) of the 4H-SiC asymmetric trench MOSFET (ATMOSFET) are investigated in this work. This article proposes a method to improve single-event burnout (SEB) tolerance. After etching source trenches, the most vulnerable position for SEB shifts from the center of gate trench to the source region. Because of the significant effect of source trenches on the extraction of excess holes, the SEB threshold increases from 380 V to 525 V. The most sensitive position for single-event rupture (SEGR) is located at the corner of oxide before and after etching source trenches.