Polarization‐ and Gate‐Tunable Optoelectronic Reverse in 2D Semimetal/Semiconductor Photovoltaic Heterostructure (Adv. Mater. 6/2024)

Polarimetric Photodetectors Due to the directional inversion of energy band, the photovoltaic detectors based on 2D anisotropic semimetal and ambipolar semiconductor exhibit an optoelectronic reverse phenomenon. In this image, the transport direction of photocurrent is readily reversed by tuning the gate voltage and incident light polarization, yielding a reversible rectifying and photovoltaic characteristic as well as exceptional polarimetric photodetection performance. More details can be found in article number 2309371 by Zhongming Wei, Jingbo Li, Nengjie Huo, and co-workers.