随机性
逆变器
静态随机存取存储器
NMOS逻辑
计算机科学
电子工程
可靠性(半导体)
汉明码
汉明距离
CMOS芯片
晶体管
算法
计算机硬件
工程类
电气工程
数学
电压
解码方法
物理
功率(物理)
统计
量子力学
区块代码
作者
Van Khanh Pham,Chi Trung Ngo,Jae-Won Nam,Jong-Phil Hong
出处
期刊:Electronics
[MDPI AG]
日期:2024-01-10
卷期号:13 (2): 309-309
被引量:4
标识
DOI:10.3390/electronics13020309
摘要
This paper presents a novel reconfigurable SRAM CRP PUF that can achieve high reliability and randomness. In conventional reconfigurable SRAM CRP PUFs, imprecise timing control can produce a biased response output, which is typically attributed to mismatches in the connection of input control signals to the two inverter arrays in the layout floorplan. We propose a timing control scheme along with the addition of an adjunct NMOS transistor to address this issue. This eliminates the connection mismatches for the challenge and word-line inputs to the two inverter arrays. Furthermore, we employ symmetric layout techniques to achieve the randomness of response output. The symmetric arrangement of the two inverter arrays maximizes the inherent random output characteristics derived from process variation. The pre-charge input signal is symmetrically connected to each array to prevent delay mismatches. A 16 × 9-bit reconfigurable PUF array is fabricated by using a 180 nm CMOS process, with a PUF cell area of 1.2 × 104 F2/bit. The experimental results demonstrate an inter Hamming distance of 0.4949 across 40 chips and an intra Hamming distance of 0.0167 for a single chip in 5000 trials. The measured worst bit error rate (BER) is 4.86% at the nominal point (1.8 V, 25 °C). The proposed prototype exhibits good reliability and randomness, as well as a small silicon area when compared to the conventional SRAM CRP PUFs.
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