Enhanced Responsivity of Solar Blind Ultraviolet Photodetector by PEALD Deposited Zn-Doped Ga2O3 Thin Films

In this article, the tunable Zn-doped Ga2O3 films were obtained by introducing ZnO intercalation during the film deposition using plasma-enhanced atomic layer deposition (PEALD). The effect of the ZnO cycle ratio on the performance of solar-blind photodetectors (PDs) was first analyzed. Compared to the pure Ga2O3, an obviously enhanced performance of Zn-doped Ga2O3 films PDs was observed by the introduction of Zn dopants, especially photocurrent or responsivity, even if the light intensity is low. A high sensitivity of Zn-doped Ga2O3 PD has been achieved with superior photoelectric characteristics for an extremely low dark current of $2.22\times 10^{-{13}}$ A, an ultrahigh light ON/ OFF current ratio of $2.89\times 10^{{6}}$ , and a satisfactory responsivity of 104 mA/W when the ZnO cycle ratio is 5%. The above excellent results imply that the Zn-doped Ga2O3 PD can be greatly beneficial to the application in deep-ultraviolet (DUV) detection.