材料科学
光电子学
激光器
电压
脉搏（音乐）
光学
电气工程
工程类
物理
作者
Xueming Li,Sujuan Wang,Yani Yang,Shankun Xu,Xueyan Bao,Lei Zhao,Xueting Liu,Zhidong Pan,Yujue Yang,Shichen Su,Nengjie Huo
摘要
The ZnO/WSe 2 memory device exhibits optoelectronic switching behavior, allowing for laser pulse-induced memory and voltage pulse-induced erasing, which represents a significant advancement in optoelectronic in-memory computing.
科研通智能强力驱动
Strongly Powered by AbleSci AI
cdercder
Rye227
pluto
冰魂
昏睡的蟠桃
bc
jenningseastera
归尘
平常的毛豆
back you up
Auston_zhong
乐乐
不倦
遇上就这样吧
顺心香菇
今天只做一件事
科研小民工
zmnzmnzmn
Cat
wy.he
皖公网安备34019202002308
