光电探测器
材料科学
窄带
光电子学
量子效率
暗电流
平面的
硅
光学
物理
计算机科学
计算机图形学(图像)
作者
Tianyi Zhang,Louis Conrad Winkler,Jakob Wolansky,Jonas Schröder,Karl Leo,Johannes Benduhn
标识
DOI:10.1002/adfm.202308719
摘要
Abstract Modern image sensors necessitate three color‐selective photodetectors: red, green, and blue (RGB) sensing units. Among those, blue light‐specific photodetectors are comparably much less reported. Here, a fully thermal‐evaporated organic photodetector (OPD) with narrowband blue detection based on exploring the dual role of the hole‐transporting layer is elegantly demonstrated. By incorporating a MoO 3 ‐doped underlayer, the narrowband OPD achieves high external quantum efficiency up to 50% at 0 V with thin‐film devices. By adopting an intrinsic underlayer in planar junction configuration along with efficient hole and electron blocking layers, an ultralow dark current (2.46 × 10 −12 A cm −2 at −0.1 V) is achieved. The device has a calculated specific detectivity ( D * ) reaching a record‐high value of 6.35 × 10 14 Jones, outperforming commercial silicon photodetectors, and an ultrahigh linear dynamic range of 205 dB. This work paves the way for high‐sensitivity narrowband organic photodetectors in the visible spectral region.
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