Enhanced magnetization in epitaxial SrRuO3 thin films via substrate-induced strain

Epitaxial SrRuO3 thin films were grown on SrTiO3, (LaAlO3)0.3(Sr2AlTaO6)0.7, and LaAlO3 substrates inducing different compressive strains. Coherently strained SrRuO3 films exhibit enhanced magnetization compared to previously reported bulk and thin film values of 1.1–1.6μB per formula unit. A comparison of (001) SrRuO3 films on each substrate indicates that strained films have consistently higher saturated moments than corresponding relaxed films, which exhibit bulk moments. These observations indicate the importance of lattice distortions in controlling the magnetic ground state in this transitional metal oxide.