Photoreflectance spectroscopy of molecular beam epitaxy-grown AlxGa1-xAs/GaAs modulation doped heterostructure

The use of photoreflectance spectroscopy for the assessment of modulation doped structure is discussed in this paper Direct empirical estimation of various parameters like alloy composition. built-in electric field and two dimensional electron gas concentration has been demonstrated. These parameters were estimated from the observed Franz-Keldysh oscillations in photoreflection spectrum at different temperatures in the range of 17 - 300 K Molecular beam epitaxy grown Al x Ga 1-x As/GaAs modulation doped structures have been used for this study.