Effect of fluorine ions on the growth and properties of anodic oxide layers of indium arsenide

The practical use of multielement IR photodetectors and idium arsenide memory elements, developed in recent years, largely determines the possibilities of the technology of deposition of dielectric layers on the surface of a semiconductor. In this paper the authors present the results of a study of the effect of fluorine ions introduced into the electrolyte on the rate of the anodic process and on the electrophysical properties of the AOF/indium arsenide interface. It is concluded that: the introduction of ammonium fluoride into a nonaqueous solution of sulfosalicylic acid increases the electrical conductivity of the electrolyte and the rate of oxidation of the semiconductor, decreases the absolute value of the potential of flat bands and the density of surface states at the oxide/indium-arsenide interface, and has no effect on the stability of the electrophysical parameters of MIS structures.