Photoluminescence and scintillation properties GaN

Photoluminescence (PL) and scintillation properties of GaN film deposited on Al2O3 substrate were evaluated. In PL and X-ray induced scintillation spectra, two emission bands at 400 and 550 nm were observed. The X-ray induced scintillation decay curve demonstrated two decay components of 1.6 and 8.4 ns. Upon 55Fe 5.9 keV X-ray and 241Am 5.5 MeV α-ray excitation, the GaN film showed a higher scintilaltion light yield than ZnO, which was a common semiconductor scintillator.