Effect of V2O5 on BaWO4 thin films deposited by RF sputtering for microwave decorative and dielectric capacitor applications

BaWO4 (BWO) + 5 Wt% V2O5 thin films were deposited by RF magnetron sputtering technique on to amorphous SiO2, PtSi substrates at room temperature under different O2%. It is observed that films annealed at 600°C, exhibit crystalline nature and displayed WO3 as a secondary phase. The existence of irreversible thermochromic behaviour in thin films was attributed to the presence of oxygen vacancies. The obtained optical response of films in the visible region makes promising for transparent colour window layer applications. The best dielectric properties were obtained for 100 O2% are ϵr = 11.75 and tanδ = 0.0066 at 1MHz.