开尔文探针力显微镜
异质结
化学气相沉积
伏打电位
材料科学
工作职能
沉积(地质)
显微镜
晶界
原子力显微镜
粒度
工作(物理)
化学物理
分析化学(期刊)
纳米技术
化学
微观结构
光电子学
冶金
光学
热力学
物理
地质学
古生物学
色谱法
沉积物
图层(电子)
作者
Sanguk Woo,Jinkyoung Yoo,David Magginetti,Ismail Bilgin,Swastik Kar,Heayoung P. Yoon,Yohan Yoon
出处
期刊:AIP Advances
[American Institute of Physics]
日期:2021-12-01
卷期号:11 (12)
被引量:2
摘要
In this work, we employ an atomic force microscopy-based technique, Kelvin probe force microscopy, to analyze heterogeneities of four different 2D/3D Ge/MoS2 heterostructures with Ge chemical vapor deposition (CVD) time. High-contrast spatially resolved contact potential difference (CPD) maps reveal the evolution of the samples by Ge deposition. The CPD map in an as-prepared sample does not display any heterogeneity, but CPD contrasts along the grain boundaries are obviously noticed as Ge is deposited on MoS2. With a sufficiently long Ge CVD deposition time, strong grain-to-grain CPD variations over the 2D/3D heterostructures are observed. The results show the variations of the work function from grain to grain that are attributed to the strain induced by the Ge island formation on the cracked MoS2 initiated by sulfur vacancies.
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