材料科学
等结构
半导体
带隙
直接和间接带隙
导带
化学物理
密度泛函理论
凝聚态物理
纳米技术
计算化学
结晶学
晶体结构
光电子学
电子
物理
化学
量子力学
作者
Lifen Guo,Leilei Zhang,Jin Liu
标识
DOI:10.1016/j.mtcomm.2022.104366
摘要
Perovskites have piqued the interest of many people due to their exceptional properties and promising applications. In this paper, the effect of pressure on lead-free double perovskites Cs 2 ZrCl 6 is investigated using first-principles calculations. It demonstrates that Cs 2 ZrCl 6 is stable up to 75 GPa, and that the alternation of the charge density distribution on the conduction bands caused by external pressure can force Cs 2 ZrCl 6 to transform from an indirect band gap semiconductor to a direct band gap semiconductor, which is applicable for isostructural Cs 2 ZrBr 6 . This suggests that Cs 2 ZrCl 6 and Cs 2 ZrBr 6 have promising underlying applications in high-pressure environments. This work is also useful for designing novel perovskites with superior performance. • Pressure effect on double perovskites Cs 2 ZrX 6 (X=Cl, Br) were explored. • The structure of Cs 2 ZrX 6 can be stable up to ~75 GPa. • Pressure-induced indirect-direct band-gap transition was observed.
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