像素
物理
CMOS芯片
占空比
抖动
探测器
炸薯条
CMOS传感器
计算机科学
电气工程
光学
光电子学
电压
电信
工程类
量子力学
作者
A. Habib,C. Bakalis,J. Brau,M. Breidenbach,Lorenzo Rota,C. Vernieri,A. Dragone
标识
DOI:10.1088/1748-0221/19/04/c04033
摘要
Abstract NAPA-p1 is a prototype Monolithic Active Pixel Sensor 'MAPS' developed as a first iteration towards meeting the detectors general requirements for future e + e - colliders. Long-term objective is to develop a wafer-scale sensor in MAPS with an area ∼ 10 cm × 10 cm. This article presents the motivations for the design choices of NAPA-p1, translating the physics requirement into circuit specifications. Simulations show a pixel jitter of < 400 ps-rms and an equivalent noise charge of 13 e - rms with an average power consumption of 1.15 mW/cm 2 assuming a 1% duty cycle, meeting the target specifications. The prototype is designed in 65 nm CMOS imaging technology, with dimensions of 1.5 mm × 1.5 mm and a pixel pitch of 25 μm. The prototype chip has been fabricated and characterization results will be available soon.
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