带隙基准
双极结晶体管
电压基准
温度系数
补偿(心理学)
电压
共发射极
材料科学
电气工程
CMOS芯片
硅带隙温度传感器
晶体管
光电子学
工程类
跌落电压
精神分析
心理学
作者
Shichao Jia,Tianchun Ye,Shimao Xiao
摘要
Summary A current‐mode (CM) bandgap voltage reference (BGR) with second‐order curvature compensation is presented in this paper. The proposed CM BGR offers a simple compensation structure that requires only six additional transistors compared with traditional BGR designs, making it an attractive solution for low temperature coefficient (TC) voltage references. Proportional to absolute temperature (PTAT) current digital‐to‐analog converters (DACs) are used to suppress the effect of process variation and device mismatch on TC. The compensation signal is generated using the voltage difference of two bipolar junction transistor (BJT) emitter–bases whose currents are the sum and difference of the PTAT current and the zero to absolute temperature (ZTAT) current, respectively. The proposed CM BGR is designed with 0.18‐μm BIPOLAR CMOS DMOS process. A TC is 2.41 ppm/°C over a wide temperature range of −40°C to 150°C. The linear sensitivity of the supply voltage from 1.2 to 2 V is 0.027%/V. With an active area of 0.0721 mm 2 , it consumes 68 μA at room temperature. The integrated output noise from 0.1 to 10 Hz is 21.9 μV.
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