铜
电镀
材料科学
电镀(地质)
镀铜
薄脆饼
X射线光电子能谱
吸附
化学工程
冶金
复合材料
纳米技术
化学
图层(电子)
物理化学
地球物理学
工程类
地质学
作者
Tong Tan,Renlong Liu,Lanfeng Guo,Zhaobo He,Xing Fan,Rui Ye,Changyuan Tao
出处
期刊:Materials
[MDPI AG]
日期:2025-04-02
卷期号:18 (7): 1622-1622
被引量:1
摘要
Through-Silicon-Via (TSV) technology is of crucial importance in the process of defect-free copper filling in vias. In this study, the small molecule 2-mercapto-1-methylimidazole (SN2) is proposed as a new leveler. It enables bottom-up super-filling of blind vias without the need for inhibitors. Atomic force microscopy (AFM), X-ray diffraction (XRD), and XPS were employed to characterize the surface morphology, crystal structure, and adsorption properties of copper crystals in these systems. Meanwhile, by means of electrochemical measurements, the inhibitory effect of the leveler SN2 on copper ion deposition and the synergistic effect between SN2 molecules and other additives were investigated. The LSV test indicated that additive SN2 inhibited copper electrodeposition after being added to the plating solution, and this inhibitory effect enhanced with increasing SN2 concentration. In the actual plating wafer test (1 ASD plating for 1 min, 5 ASD plating for 5 min, and 10 ASD plating for 1 h), the best plating effect was achieved at 3 ppm, which verified the conjecture of the galvanostatic measurements. Moreover, XPS and computer simulations revealed that SN2 could be adsorbed onto the copper surfaces. This work will inspire the discovery of new effective levelers in the future.
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