微波食品加热
材料科学
印刷电路板
显微镜
光电子学
微波成像
光学
物理
计算机科学
电气工程
电信
工程类
作者
Tao Zhou,Quanxin Zhou,Hao Liu,Haoyun Liu,Zhe Wu,Jianlong Liu,Yubin Gong,Baoqing Zeng
出处
期刊:Symmetry
[Multidisciplinary Digital Publishing Institute]
日期:2025-04-08
卷期号:17 (4): 561-561
摘要
Near-field microwave microscopy (NSMM) is a promising technique for the non-destructive, high-resolution imaging of electrical and dielectric properties at the microscale. However, its performance is highly sensitive to the probe-to-sample distance, often requiring extremely close proximity, which limits its practical application in device manufacturing, especially in scenarios involving coatings and packaging. In this study, we propose a distance inversion method based on a dual-port symmetrical microwave probe to improve imaging performance at larger, safer scanning distances. This method utilizes the correlation between probe height and resonant frequency to compensate for distance-induced signal distortions. The experimental results demonstrate that even at a probe–sample distance of 80 µm, clear and distinguishable NSMM images of printed circuit boards (PCBs) can be obtained. The imaging resolution reached 13 µm. The defect structure with dimensions of 130 × 130 µm2 on the PCB was successfully identified. The signal-to-noise ratio was significantly enhanced after applying the correction method. This approach not only improves the robustness and flexibility of NSMM in industrial scenarios but also extends its applicability to packaged or coated electronic devices, offering a valuable tool for advanced non-destructive testing.
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