纤锌矿晶体结构
晶体缺陷
材料科学
原子间势
密度泛函理论
八面体
间质缺损
分子动力学
结晶学
Atom(片上系统)
嵌入原子模型
凝聚态物理
计算化学
化学
晶体结构
物理
锌
冶金
计算机科学
兴奋剂
嵌入式系统
光电子学
作者
Huaping Lei,Jun Chen,P. Ruterana
出处
期刊:AIP Advances
[American Institute of Physics]
日期:2023-01-01
卷期号:13 (1)
被引量:2
摘要
In this paper, a new version of the Stillinger–Weber (SW) potential for wurtzite GaN is presented, by which we systematically explore the structural and thermodynamical properties of native point defects and their complexes. In parallel, the semi-empirical Modified Embedded-Atom Method (MEAM) potential is selected for comparison. The SW and MEAM potentials are assessed by the reproduction of the fundamental properties of wurtzite GaN and by the ability to describe the inversion domain boundaries and the wurtzite–rocksalt phase transition. Then the structural search of native point defects and their complexes in GaN is implemented using both SW and MEAM potentials with the benchmark of Density Functional Theory (DFT) calculations. Besides vacancies and antisites, four N and five Ga interstitials are confirmed by refining the DFT calculations, among which two N split interstitials N+−N⟨21̄1̄0⟩ and N+−Ga⟨011̄0⟩, and two Ga split interstitials, Ga+−Ga⟨011̄0⟩−g and Ga+−N⟨011̄0⟩, are observed for the first time. The SW potential correctly predicts the octahedral occupation GaOct to be the most stable Ga interstitial, while the MEAM potential predicts the ground state of the N+−N⟨011̄0⟩ split interstitial (N+−N⟨011̄0⟩−g) as the most stable N interstitial. However, neither of the two potentials could simultaneously generate the most stable configurations of N and Ga interstitials. The investigations of point defect complexes reveal that N octahedral Frenkel [FrenkelOct(N)] and paired antisite (NGaGaN) defects are unstable and get converted into VN⊕N+−N⟨011̄0⟩−g configurations with different separations between VN and N+−N⟨011̄0⟩−g point defects based on the DFT calculations. The formation energies calculated by the DFT and SW potential demonstrate that Schottky, Ga octahedral Frenkel [FrenkelOct(Ga)], and VN⊕N+−N⟨011̄0⟩−g point defect complexes are energetically feasible and that they should not dissociate into two isolated point defects. In contrast, the MEAM potential predicts the dissociation to be exothermic for Schottky and VN⊕N+−N⟨011̄0⟩−g. Overall, the structural features concerned with N–N or Ga–Ga bonds relaxed by the SW potential are more consistent with DFT calculations than the MEAM counterpart.
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