Epitaxial growth of EuNiO3 on SrTiO3 and its application to stacked protonation resistance switching devices

The application of strongly correlated oxides as electronic devices is crucial issues to both modern physics and industry. In this work, the strongly correlated oxides EuNiO3 epitaxial thin film on SrTiO3 is synthesized, and the metal–insulator transition at 193 °C is identified. By injecting proton into EuNiO3 via a Pt catalyst, the huge resistance modulation up to six orders of magnitude is achieved. Moreover, the resistance switching is also observed in a prototype device built by protonated EuNiO3 and Nb-SrTiO3. Due to the intrinsic low activation energy of proton diffusion, comparing with oxygen-driven devices with the same structure, the switching speed of the proton-driven prototype device is 102–103 faster and might be further enhanced by optimizing the device design.