铋
材料科学
半导体
电导率
透明度(行为)
硒化物
透射率
硒化锌
光电子学
半金属
带隙
纳米技术
冶金
计算机科学
硒
化学
物理化学
计算机安全
作者
Quanming Ding,Jianbo Wang,Zhiqing Gu,Dayong Jiang,Chi Zhang,Yuankai Li,Chaoquan Hu
标识
DOI:10.1016/j.matlet.2023.134935
摘要
Designing semiconductor/metal/semiconductor (SMS) sandwich structure film is an effective way to combine transparency and conductivity. However, traditional SMS mainly uses metal oxides such as ITO as the semiconductor material, which can only achieve transparency and conductivity in the visible to near-infrared band, but not in the mid-to far-infrared (MFIR) band. Here, we use bismuth selenide as semiconductor material and Ti as metal to construct SMS and achieve excellent MFIR transparent conductive properties. The results show that the conductivity of the SMS is increased by 3.8 times compared with the bismuth selenide, with only 3% decrease in the transmittance in 8–12 μm. Therefore, this study proposes a new material design strategy to solve the bottleneck problem of integrating MFIR transparency and conductivity.
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